The RJF0409JSP is a 40 V, 5 A silicon N-channel thermal FET featuring built-in over temperature shut down circuit and high endurance capability against short circuit. It has high-density mounting and ...

Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time; and highly accurate G2 SPICE model that accurately reproduces transient ...

The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

Toshiba Electronics Europe has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET. The TPH2R70AR5 is a 100V-rated N-channel power MOSFET Credit: Toshiba Electronics Europe The device has ...

Power MOSFETs are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...

Said to be a cost-effective alternative to comparable devices, the IRF7338 dual n- and p-channel power MOSFET is suitable for use in instant power up circuits for USB ports, DDR DRAM applications, and ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched "TPH2R70AR5," a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba's latest-generation process([1]) . The MOSFET ...

Toshiba Launches 100V N-Channel Power MOSFET with Its Latest Generation Process Technology[1] to Improve Efficiency in Switched-Mode Power Supplies for Industrial Equipment Toshiba Electronic Devices ...