EDN

Body Diode Reliability for 1200 V SiC MOSFET

Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...
EDN

MOSFET uses fast-recovery body diode

Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
Nasdaq

Vishay Intertechnology 600 V EF Series Fast Body Diode MOSFET in Low Profile PowerPAK® 10 x 12 Package Delivers Industry’s Lowest RDS(ON)*Qg FOM

MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...
Seeking Alpha

Magnachip Debuts New Family of 600V SJ MOSFET Products Featuring Fast Recovery Body Diodes

SEOUL, South Korea, May 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation (MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor ...
Electronic Design

Power-MOSFET Body-Diode Features Help Streamline Telecom Systems

The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique maximizes ...
Yahoo Finance

Vishay Intertechnology’s New MOSFET and Diode Power Modules in EMIPAK 1B Offer a Complete Solution for On-Board Charging Applications

MALVERN, Pa., Nov. 16, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced seven new MOSFET and diode power modules designed specifically for on-board charger ...
Business Wire

Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
Electronic Design

Low RDS(ON) Power MOSFET and Schottky Diode

USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...
Nasdaq

Vishay Intertechnology 600 V EF Series Fast Body Diode MOSFET Delivers Industry-Low RDS(ON)*Qg FOM for Power Conversion Applications

MALVERN, Pa., Dec. 02, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing ...
The Globe and Mail

Alpha and Omega Semiconductor Releases 600V Low Ohmic and Fast Body Diode αMOS5™ Super Junction MOSFETs Family

Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power semiconductors and power ICs, and digital power products, today ...
Electronics Weekly

Zetex perfect diode controller for flyback converters

Zetex has announced a synchronous rectifier controller for flyback converters. Combined with a discrete power Mosfet, the ZXGD3101T8 ‘zero point detector driver’ replaces Schottky and other diodes to ...