When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...

At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more ...

—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

The 75th anniversary of the invention of the transistor sparked a lively panel discussion at IEDM, spurring debate about the future of CMOS, the role of III-V and 2D materials in future transistors, ...

Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...

What Is A Semiconductor Gate? The gate electrode is a thin film of a conductive material deposited on top of an insulator layer in a transistor. The gate sits above a channel formed in the main body ...